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Si7342DP
Vishay Siliconix
N-Channel 30 V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( ? )
0.00825 at V GS = 10 V
0.00975 at V GS = 4.5 V
I D (A)
15
13
? Halogen-free According to IEC 61249-2-21
Definition
? Extremely Low Q gd for Low Switching Losses
? TrenchFET ? Power MOSFET
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
? 100 % R g Tested
? Compliant to RoHS Directive 2002/95/EC
PowerPAK SO-8
APPLICATIONS
? High-Side DC/DC Conversion
6.15 mm
1
S
2
S
S
5.15 mm
- Notebook
- Server
D
3
4
G
D
8
7
D
D
6
5
D
G
Bottom View
Ordering Information: Si7342DP-T1-E3 (Lead (Pb)-free)
Si7342DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
30
± 12
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
15
12
± 60
9
7
A
Continuous Source Current (Diode Conduction) a
I S
4.1
1.5
Maximum Power Dissipation
a
T A = 25 °C
T A = 70 °C
P D
5
3.2
1.8
1.1
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (MOSFET) a
Maximum Junction-to-Case (Drain)
t ? 10 s
Steady State
Steady State
R thJA
R thJC
20
53
2.1
25
70
3.2
°C/W
Notes:
a. Surface mounted on 1” x 1” FR4 board.
b. See solder profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72751
S11-0212-Rev. D, 14-Feb-11
www.vishay.com
1
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